Modeling and Simulation of Gate-Cathode Junction of a Thyristor with Amplifying Gate and Emitter Shorts


In this work a model is developed for the gate-cathode junction of a power thyristor containing an amplifying gate and emitter shorts. The geometry of this junction and the model parameters are defined and extracted according to a new methodology. The simulation results are compared with the measured results. It has been found that the developed model satisfactorily describes the performance of the gate-cathode junction of practical thyristors.

  • Abstract
  • Key Words
  • 1. Introduction
  • 2. Model Description
  • 3. Extraction of Model Parameters
  • 4. Summaries
  • References

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