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Simulation of Plasma Discharges in Plasma Enhanced Chemical Vapor Deposition for Microcrystalline Silicon Films

Excerpt

In the large area μc-Si:H deposition process, the plasma spatial distribution has an important influence on the uniformity of films in PECVD. In this paper, the plasma fluid model was established and used to simulate the gas discharge of high H2 diluted SiH4 on μc-Si: H films deposition process. When the excitation frequency, electrode spacing, inlet velocity, and SiH4 concentration are 40.68MHz, 1.5cm, 1m/s, and 6%, respectively, the spatial distribution of SiH3, SiH2 radicals and electron are basically uniform, and the SiH3 radical has the highest number density at this time. The SiH3 and SiH2 radicals are main deposited precursors of microcrystalline silicon films. Our simulation results also show that with the increase of silane concentration, the SiH3 and SiH2 et al radical number density increase, but the inhomogeneity of SiH3 radical number density also increases simultaneously. For large area deposition process, the silane concentration should not exceed 10% generally.

  • Abstract
  • Keywords
  • Introduction
  • Results and Discussion
  • Conclusions
  • Acknowledgment
  • References

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